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    Part Img SI6463BDQ-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6.2A 8-TSSOP
    • Original
    • Yes
    • Obsolete
    • EAR99
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    SI6463BDQ-T1-E3 datasheet preview

    SI6463BDQ-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI6463BDQ-T1-E3 is a QFN-16 package with a 3x3 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note 'QFN-16 Land Pattern' (document number 81011).
    • To ensure reliable operation of the SI6463BDQ-T1-E3 in high-temperature environments, follow proper thermal design and layout guidelines. Ensure good thermal conduction between the device and the PCB, and consider using thermal vias or heat sinks if necessary. Additionally, follow the recommended operating temperature range and derate the device's power dissipation accordingly.
    • The SI6463BDQ-T1-E3 has an ESD protection level of ±2 kV human body model (HBM) and ±1 kV charged device model (CDM) per JEDEC standards JESD22-A114 and JESD22-C101, respectively.
    • The SI6463BDQ-T1-E3 is an industrial-grade device, but it is not AEC-Q100 qualified. If you need a device for automotive applications, consider using a qualified alternative, such as the AEC-Q100 qualified SI6463BDQ-T1-A3.
    • The SI6463BDQ-T1-E3 has a moisture sensitivity level (MSL) of 3, per JEDEC standard J-STD-020. This means the device can be exposed to a maximum of 168 hours of floor life at 30°C and 60% relative humidity before soldering.
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