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    SI7112DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11.3A 1212-8
    • Original
    • Not Recommended
    • EAR99
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    SI7112DN-T1-GE3 datasheet preview

    SI7112DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7112DN-T1-GE3 is a 5x5 mm QFN package with a 0.5 mm pitch. A thermal pad is recommended for optimal thermal performance.
    • To ensure proper soldering, use a reflow soldering process with a peak temperature of 260°C (500°F) for 10-30 seconds. Avoid using wave soldering or hand soldering, as it may damage the device.
    • The SI7112DN-T1-GE3 is rated for operation from -40°C to 150°C (TJ). However, for optimal performance and reliability, it is recommended to operate the device within a temperature range of -20°C to 125°C.
    • The SI7112DN-T1-GE3 has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the PCB is properly grounded.
    • The recommended input capacitance for the SI7112DN-T1-GE3 is 10 nF to 100 nF. This value can be adjusted based on the specific application requirements and noise filtering needs.
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