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    SI7120DN-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 6.3A 1212-8
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SI7120DN-T1-E3 datasheet preview

    SI7120DN-T1-E3 Frequently Asked Questions (FAQs)

    • For optimal thermal performance, it is recommended to have a solid copper plane under the device, with multiple vias to the inner layers to dissipate heat. The PCB layout should also ensure that the device is not surrounded by other heat-generating components.
    • To ensure proper soldering, follow the recommended soldering profile and use a solder with a melting point above 217°C (423°F). Apply a small amount of solder paste to the pads, and use a reflow oven or a soldering iron with a temperature-controlled tip.
    • The maximum allowed voltage on the gate pin is ±20V, but it is recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
    • Yes, the SI7120DN-T1-E3 is a high-reliability device suitable for use in demanding applications. It is built with a robust design and undergoes rigorous testing to ensure high performance and long-term reliability.
    • To prevent ESD damage, handle the device with an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Use ESD-protective packaging and follow proper assembly procedures to minimize the risk of ESD damage.
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