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    SI7123DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10.2A 1212-8
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
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    SI7123DN-T1-GE3 datasheet preview

    SI7123DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7123DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the VCC pin with a 10nF to 100nF capacitor to reduce noise and ensure stable operation.
    • The maximum allowed power dissipation for the SI7123DN-T1-GE3 is 250mW. Ensure that the device is operated within this limit to prevent overheating and ensure reliable operation.
    • To protect the SI7123DN-T1-GE3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD-protection diodes or resistors.
    • The recommended operating temperature range for the SI7123DN-T1-GE3 is -40°C to 125°C. Operating the device outside this range may affect its performance and reliability.
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