Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img SI7456DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 5.7A PPAK 8SOIC
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    SI7456DP-T1-GE3 datasheet preview

    SI7456DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7456DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the VOUT pin to a capacitor (e.g., 1uF) to ground. Additionally, decouple the VIN pin with a 0.1uF capacitor to ground.
    • The SI7456DP-T1-GE3 is rated for operation from -40°C to 125°C (junction temperature). However, the device can be operated up to 150°C with derating.
    • Power dissipation (PD) can be calculated using the formula: PD = (VIN - VOUT) x IOUT. Ensure the calculated PD is within the maximum rating of 1.4W to prevent overheating.
    • A 1uF to 10uF ceramic capacitor is recommended for input decoupling, depending on the specific application requirements. A larger capacitor value may be needed for high-impedance sources or noisy input signals.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel