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    Part Img SI7491DP-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 11A PPAK 8SOIC
    • Original
    • Yes
    • Obsolete
    • EAR99
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    SI7491DP-T1-E3 datasheet preview

    SI7491DP-T1-E3 Frequently Asked Questions (FAQs)

    • For optimal performance, it is recommended to follow a 2-layer PCB layout with a solid ground plane on the bottom layer. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device. A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently.
    • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Use a high-quality, low-ESR capacitor (e.g., 100 nF, X7R or X5R dielectric) for decoupling, and place it as close as possible to the device. Additionally, use a low-inductance, high-current-capable wire or PCB trace for the power supply connections.
    • Operating the device beyond the recommended temperature range (–55°C to 150°C) may lead to reduced performance, decreased reliability, and potentially even device failure. It is essential to ensure the device operates within the specified temperature range to maintain its electrical characteristics and lifespan.
    • To prevent electrostatic discharge (ESD) damage, handle the device with ESD-protective equipment, such as wrist straps, mats, or gloves. Ensure the PCB and assembly process follow ESD-safe practices, and consider adding ESD protection devices (e.g., TVS diodes) to the circuit design.
    • Vishay performs various reliability and qualification tests on the SI7491DP-T1-E3, including but not limited to: high-temperature operating life (HTOL), temperature humidity bias (THB), temperature cycle (TC), and electrostatic discharge (ESD) testing. These tests ensure the device meets the required standards for quality and reliability.
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