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    SI7726DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8
    • Original
    • Yes
    • Not Recommended
    • EAR99
    • Find it at Findchips.com

    SI7726DN-T1-GE3 datasheet preview

    SI7726DN-T1-GE3 Frequently Asked Questions (FAQs)

    • A recommended PCB layout for optimal thermal performance would be to have a solid copper plane on the top and bottom layers, with multiple vias connecting them to dissipate heat efficiently. Additionally, keeping the component away from other heat sources and using a thermal pad or heat sink can further improve thermal performance.
    • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range (up to 150°C) and consider derating the device's power dissipation accordingly. Additionally, using a heat sink or thermal pad, and ensuring good airflow around the device can help maintain a safe operating temperature.
    • The SI7726DN-T1-GE3 has built-in ESD protection, but it's still essential to follow standard ESD handling precautions when handling the device, such as using an ESD wrist strap, mat, or workstation, and avoiding direct contact with the device's pins.
    • While the SI7726DN-T1-GE3 is a high-performance device, it's essential to consult with Vishay Intertechnologies or a qualified reliability engineer to determine its suitability for high-reliability or automotive applications, as it may require additional testing, validation, or qualification.
    • The recommended soldering and assembly techniques for the SI7726DN-T1-GE3 include using a soldering iron with a temperature range of 250°C to 260°C, and following standard SMT assembly guidelines, such as using a solder paste with a melting point above 217°C.
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