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    Part Img SI7852ADP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 30A PPAK 8SOIC
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    SI7852ADP-T1-GE3 datasheet preview

    SI7852ADP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB layout and land pattern for the SI7852ADP-T1-GE3 can be found in the Vishay Intertechnologies application note AN10343. It provides detailed guidelines for PCB design, including pad sizes, spacing, and thermal considerations.
    • To ensure reliable operation across the full temperature range, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance. Additionally, ensure that the device is operated within its specified power ratings and that the PCB is designed to minimize thermal gradients.
    • The SI7852ADP-T1-GE3 has built-in ESD protection, but it's still essential to follow proper handling and storage precautions to prevent damage. Vishay recommends following the ESD Association's standard for ESD control, ANSI/ESD S20.20, and using anti-static packaging and handling materials.
    • The SI7852ADP-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade products. For high-reliability or aerospace applications, consider using devices with the 'HR' or 'AQ' suffix, which are specifically designed and qualified for these environments.
    • The SI7852ADP-T1-GE3 is not specifically designed or tested for radiation hardness or TID tolerance. For applications requiring radiation hardness, consider using devices specifically designed and qualified for these environments, such as those with the 'RAD' suffix.
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