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    Part Img SI7852DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 7.6A PPAK 8SOIC
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    SI7852DP-T1-GE3 datasheet preview

    SI7852DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7852DP-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
    • To ensure proper biasing, connect the input pins (VIN and VOUT) to a stable voltage source, and decouple the input and output pins with 10uF and 1uF capacitors, respectively. Additionally, ensure the input voltage is within the recommended operating range of 4.5V to 18V.
    • The SI7852DP-T1-GE3 has an operating temperature range of -40°C to 150°C. However, for optimal performance and reliability, it is recommended to operate the device within a temperature range of -20°C to 125°C.
    • To protect the SI7852DP-T1-GE3 from overvoltage and overcurrent conditions, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits. You can also use a fuse or a polyfuse to limit the current in case of a fault condition.
    • To minimize EMI and noise, keep the input and output traces as short as possible, and use a ground plane to reduce radiation. Avoid running sensitive analog signals near the switching node, and use a shielded cable or a ferrite bead to reduce EMI emissions.
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