The recommended PCB footprint for the SI7892BDP-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5 V and 5.5 V, and the VCC pin to a stable voltage source between 1.65 V and 5.5 V. Additionally, decouple the VIN and VCC pins with 1 μF and 0.1 μF capacitors, respectively, to reduce noise and ensure stable operation.
The SI7892BDP-T1-GE3 has an operating temperature range of -40°C to 125°C, making it suitable for a wide range of industrial and automotive applications.
To protect the SI7892BDP-T1-GE3 from ESD damage, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection features such as TVS diodes or ESD protection arrays.
The typical rise and fall time for the SI7892BDP-T1-GE3 is 10 ns and 15 ns, respectively, making it suitable for high-speed switching applications.
SI7892BDP-T1-GE3 datasheet
by Vishay Siliconix
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