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    Part Img SIA910EDJ-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 12V 4.5A SC-70-6
    • Original
    • Yes
    • Active
    • EAR99
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    SIA910EDJ-T1-GE3 datasheet preview

    SIA910EDJ-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended storage condition for SIA910EDJ-T1-GE3 is in a dry, cool place, away from direct sunlight, and in its original packaging or anti-static bag to prevent electrostatic discharge damage.
    • While the SIA910EDJ-T1-GE3 is rated for operation up to 150°C, it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature environments.
    • Handle the SIA910EDJ-T1-GE3 by the body, avoid touching the pins, and use an anti-static wrist strap or mat to prevent ESD damage. Also, ensure the workspace and tools are ESD-safe.
    • The recommended soldering profile for the SIA910EDJ-T1-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s.
    • While the SIA910EDJ-T1-GE3 is not hermetically sealed, it's designed to operate in a normal humidity environment. However, it's essential to follow proper handling and storage procedures to prevent moisture-related issues.
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