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    Part Img SIB417EDK-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 9A SC75-6
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SIB417EDK-T1-GE3 datasheet preview

    SIB417EDK-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIB417EDK-T1-GE3 is a rectangle with dimensions of 2.5 mm x 1.3 mm, with a thermal pad of 1.5 mm x 1.3 mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
    • To ensure reliability in high-temperature applications, it's crucial to follow the recommended operating temperature range of -55°C to 150°C. Additionally, ensure proper thermal management by providing adequate heat sinking, using a thermal interface material, and keeping the device away from heat sources.
    • The maximum allowed voltage for the SIB417EDK-T1-GE3 is 100 V. Exceeding this voltage can cause permanent damage to the device. It's essential to ensure that the voltage rating is not exceeded during operation, including during startup and shutdown sequences.
    • During storage and shipping, it's essential to handle the SIB417EDK-T1-GE3 with care to prevent damage. Store the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. Avoid bending, flexing, or applying excessive force to the leads.
    • The SIB417EDK-T1-GE3 is an ESD-sensitive device and requires proper handling and protection during assembly and testing. Ensure that all personnel handling the device are grounded, and use ESD-protective equipment, such as wrist straps and mats, to prevent damage.
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