The recommended storage condition for SIE810DF-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
Handle the SIE810DF-T1-GE3 by the body, avoiding touching the leads or electrical contacts. Use anti-static wrist straps, mats, or other ESD protection devices to prevent electrostatic discharge damage.
The maximum allowable power dissipation for the SIE810DF-T1-GE3 is 1.5 W, with a thermal resistance of 83.3°C/W. Ensure proper heat sinking and thermal management to prevent overheating.
Yes, the SIE810DF-T1-GE3 is suitable for high-frequency applications up to 1 GHz. However, ensure proper PCB layout, decoupling, and impedance matching to minimize signal loss and distortion.
Yes, the SIE810DF-T1-GE3 is RoHS (Restriction of Hazardous Substances) and REACH (Registration, Evaluation, Authorization, and Restriction of Chemicals) compliant, meeting the requirements for environmentally friendly and safe electronic components.
