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    Part Img SIHFBF30S-GE3 datasheet by Vishay Siliconix

    • MOSFET N-CHANNEL 900V
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    SIHFBF30S-GE3 datasheet preview

    SIHFBF30S-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIHFBF30S-GE3 is a rectangular pad with a size of 5.5 mm x 3.5 mm, with a thermal pad size of 3.5 mm x 3.5 mm. The pad spacing should be 1.5 mm.
    • To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a soldering flux. The soldering time should be limited to 3-5 seconds per pin. Avoid using excessive soldering force, which can damage the component.
    • The maximum allowed voltage derating for the SIHFBF30S-GE3 is 80% of the rated voltage. This means that if the component is rated for 30 V, the maximum allowed voltage derating would be 24 V.
    • The SIHFBF30S-GE3 is rated for operation up to 150°C. However, it's recommended to derate the component's power handling capability at high temperatures. Consult the datasheet and application notes for specific guidance on high-temperature operation.
    • To prevent electrostatic discharge (ESD) damage, handle the SIHFBF30S-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the workspace is ESD-safe, and avoid touching the component's pins or body.
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