The maximum junction temperature for the SIHG24N65E-GE3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
To ensure the MOSFET is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current (Ig) should be sufficient to charge the gate capacitance quickly. A gate driver with a high current capability and a low output impedance is recommended.
A good PCB layout for the SIHG24N65E-GE3 should minimize the parasitic inductance and resistance of the PCB traces. This can be achieved by using wide, short traces for the drain and source connections, and by placing the MOSFET close to the decoupling capacitors. A solid ground plane and a low-impedance power supply connection are also recommended.
Yes, the SIHG24N65E-GE3 is suitable for high-frequency switching applications up to 1MHz. However, the MOSFET's switching losses and parasitic capacitances should be considered in the design. A good understanding of the MOSFET's characteristics and the application's requirements is necessary to ensure reliable operation.
To protect the MOSFET from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used to limit the voltage across the MOSFET. Additionally, a current sense resistor and a fuse can be used to detect and limit the current through the MOSFET. A good thermal design and a reliable cooling system are also essential to prevent overheating.
SIHG24N65E-GE3 datasheet
by Vishay Siliconix
