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    Part Img SIHP12N50C-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 12A TO-220AB
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99

    SIHP12N50C-E3 datasheet preview
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    SIHP12N50C-E3 Price & Stock

    Distributor Stock Lead Time Min Order Qty Price Buy
    DigiKey 500 1
    • 1 $5.54
    • 10 $3.69
    • 100 $2.65
    • 1000 $2.20
    • 10000 $2.20
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    ComSIT USA 900
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    SIHP12N50C-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for SIHP12N50C-E3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
    • Yes, SIHP12N50C-E3 is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times. However, it's essential to consider the device's thermal performance and ensure proper cooling.
    • To ensure the reliability of SIHP12N50C-E3 in a high-temperature environment, it's essential to follow the recommended operating temperature range (-40°C to 150°C), use a suitable thermal interface material, and ensure proper heat sinking and cooling.
    • Yes, you can parallel multiple SIHP12N50C-E3 devices to increase current handling, but it's crucial to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal gradients.
    • The recommended gate drive voltage for SIHP12N50C-E3 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can reduce switching losses but may also increase gate charge and power consumption.
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