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    SIHP14N50D-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-200AB
    • Original
    • Obsolete
    • EAR99
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    SIHP14N50D-GE3 datasheet preview

    SIHP14N50D-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for SIHP14N50D-GE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
    • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux compatible with the component's lead finish. Avoid overheating or applying excessive force, which can damage the device.
    • The maximum allowed voltage derating for SIHP14N50D-GE3 is 10% of the maximum rated voltage (500V) at high temperatures (above 150°C). This is to ensure the device operates within its safe operating area (SOA).
    • Yes, SIHP14N50D-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances to ensure optimal performance.
    • To protect SIHP14N50D-GE3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has adequate ESD protection measures, such as TVS diodes or ESD protection arrays.
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