SIHP24N65E-E3 datasheet by Vishay Siliconix

SIHP24N65E-E3 Frequently Asked Questions (FAQs)

• What is the maximum operating junction temperature of SIHP24N65E-E3?
  The maximum operating junction temperature of SIHP24N65E-E3 is 175°C.
• Is SIHP24N65E-E3 a radiation-hardened device?
  No, SIHP24N65E-E3 is not a radiation-hardened device. It is a commercial-grade power MOSFET.
• Can I use SIHP24N65E-E3 in a high-reliability application?
  While SIHP24N65E-E3 is a high-quality device, it is not designed for high-reliability applications. For such applications, you may need to consider devices with specific reliability certifications, such as automotive or aerospace-grade devices.
• What is the recommended gate drive voltage for SIHP24N65E-E3?
  The recommended gate drive voltage for SIHP24N65E-E3 is between 10V and 15V. However, the device can tolerate up to 20V gate-source voltage.
• Can I parallel multiple SIHP24N65E-E3 devices to increase current handling?
  Yes, you can parallel multiple SIHP24N65E-E3 devices to increase current handling. However, you need to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.