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    Part Img SIR172DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 20A PPAK 8SOIC
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    SIR172DP-T1-GE3 datasheet preview

    SIR172DP-T1-GE3 Frequently Asked Questions (FAQs)

    • Vishay recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a heat sink.
    • To ensure reliable soldering, follow the recommended soldering profile: peak temperature of 260°C, time above 217°C of 30 seconds, and a soldering iron temperature of 350°C. Use a solder with a melting point of 217°C or higher, and avoid using excessive solder or flux.
    • The maximum allowed voltage derating for the SIR172DP-T1-GE3 is 80% of the rated voltage. This means that if the device is rated for 1200 V, the maximum allowed voltage derating would be 960 V.
    • To handle ESD protection, ensure that the device is handled and stored in an ESD-protected environment. Use ESD-protective packaging, wrist straps, and mats, and follow proper ESD handling procedures. The SIR172DP-T1-GE3 has an ESD rating of 2 kV human body model (HBM) and 150 V machine model (MM).
    • The recommended storage condition for the SIR172DP-T1-GE3 is in a dry, cool place with a temperature range of -40°C to 30°C and a relative humidity of 60% or less. Avoid storing the device in direct sunlight or near heat sources.
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