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    Part Img SIR882DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A 8-SOIC
    • Original
    • Yes
    • Yes
    • Not Recommended
    • EAR99
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    SIR882DP-T1-GE3 datasheet preview
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    SIR882DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended land pattern for the SIR882DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for QFN and DFN Packages' (document number 28353).
    • The thermal pad on the SIR882DP-T1-GE3 should be connected to a solid ground plane to ensure optimal thermal performance. A thermal via or a thermal pad connection to the ground plane is recommended.
    • The SIR882DP-T1-GE3 has an operating temperature range of -55°C to 150°C. However, the maximum junction temperature (TJ) should not exceed 150°C.
    • Yes, the SIR882DP-T1-GE3 is suitable for high-reliability applications. It is manufactured using a qualified process and is compliant with the Automotive Electronics Council (AEC) Q100 and Q101 standards.
    • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the Vishay Intertechnologies' application note 'Soldering Guidelines for QFN and DFN Packages' (document number 28354).
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