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    Part Img SL3S1013FTB0,115 datasheet by NXP Semiconductors

    • SL3S1013FTB0 - UCODE G2iM and G2iM+, SOT886 Package, Standard Marking, Reel Pack, SMD, 7"
    • Original
    • Yes
    • Active
    • 8542.32.00
    • 8542.39.00.00
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    SL3S1013FTB0,115 datasheet preview

    SL3S1013FTB0,115 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical and avoid vias under the IC. Use a 10nF decoupling capacitor between VDD and GND, and a 100nF capacitor between VBAT and GND.
    • Ensure good thermal conductivity by using a heat sink or a thermal pad on the exposed pad of the IC. Keep the device away from heat sources and ensure good airflow around the device.
    • Power up the device in the following sequence: VBAT, VDD, and then the clock signal. Ensure VBAT is powered up before VDD to prevent latch-up.
    • Use ESD protection devices such as TVS diodes or ESD arrays on the I/O lines. Ensure the ESD protection devices are rated for the maximum voltage and current of the I/O lines.
    • The recommended clock signal frequency is between 10 kHz to 100 kHz, and the amplitude should be between 0.5V to 1.5V peak-to-peak.
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