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    SQS482EN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16A 1212-8
    • Original
    • Active
    • EAR99
    • Find it at Findchips.com

    SQS482EN-T1-GE3 datasheet preview

    SQS482EN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for SQS482EN-T1_GE3 is a rectangular pad with a size of 2.5 mm x 1.25 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
    • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
    • The maximum allowable voltage for SQS482EN-T1_GE3 is 480 V, which is the maximum repetitive peak voltage. However, it's recommended to operate the device within the specified voltage range to ensure reliable operation.
    • Yes, SQS482EN-T1_GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit to ensure optimal performance.
    • To ensure reliability in a humid environment, follow proper storage and handling procedures, and consider using a conformal coating or potting compound to protect the device from moisture. Also, ensure the device is operated within the specified temperature and humidity range.
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