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    STD3N40K3 datasheet by STMicroelectronics

    • FETs - Single, Discrete Semiconductor Products, MOSFET N CH 400V 2A DPAK
    • Original
    • Yes
    • Not Recommended
    • EAR99
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    STD3N40K3 datasheet preview
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    STD3N40K3 Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the STD3N40K3 is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 6V, and the drain-source voltage (Vds) should be between 10V and 40V. Additionally, the gate current (Ig) should be limited to 100 mA.
    • The maximum power dissipation of the STD3N40K3 is 125 W, but this can be increased to 200 W with proper heat sinking and thermal management.
    • To protect the STD3N40K3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.
    • The maximum junction temperature of the STD3N40K3 is 150°C, but it is recommended to operate the device at a junction temperature below 125°C for optimal reliability and performance.
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