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    Part Img STF9N60M2 datasheet by STMicroelectronics

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 5.5A TO-220FP
    • Original
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com

    STF9N60M2 datasheet preview

    STF9N60M2 Frequently Asked Questions (FAQs)

    • The maximum operating junction temperature of the STF9N60M2 is 150°C.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 600V, depending on the application.
    • The recommended gate resistor value for the STF9N60M2 is between 1kΩ and 10kΩ, depending on the switching frequency and application requirements.
    • To protect the STF9N60M2 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding overcurrent protection using a fuse or a current sense resistor.
    • The maximum allowable power dissipation of the STF9N60M2 is 150W, but this value can be derated based on the operating temperature and other application-specific factors.
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