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    Part Img STGW15M120DF3 datasheet by STMicroelectronics

    • Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 30A 259W
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
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    STGW15M120DF3 datasheet preview

    STGW15M120DF3 Frequently Asked Questions (FAQs)

    • The maximum junction temperature (Tj) of the STGW15M120DF3 is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation and to ensure a long lifespan.
    • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and use a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
    • The recommended gate drive voltage for the STGW15M120DF3 is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
    • To protect the STGW15M120DF3 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse to detect and respond to overcurrent conditions. Implementing a protection circuit with a fast response time can help prevent damage to the device.
    • To ensure optimal performance and minimize electromagnetic interference (EMI), it's recommended to follow a good PCB layout practice. Keep the power traces short and wide, use a solid ground plane, and place decoupling capacitors close to the device. Avoid running sensitive signal traces near the power traces, and use a shielded cable for the gate drive signal.
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