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    Part Img STTH1202FP datasheet by STMicroelectronics

    • Ultrafast recovery diode
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.10.00.80
    • 8541.10.00.80
    • Find it at Findchips.com

    STTH1202FP datasheet preview
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    STTH1202FP Frequently Asked Questions (FAQs)

    • STMicroelectronics recommends a PCB layout with a large copper area connected to the drain pad to dissipate heat efficiently. A thermal via under the drain pad can also improve thermal performance.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink or thermal interface material to reduce thermal resistance.
    • Although the datasheet doesn't specify a maximum voltage, it's generally recommended to keep the gate-source voltage (Vgs) between -20V and +20V to prevent damage to the internal gate oxide.
    • Yes, the STTH1202FP is suitable for high-frequency switching applications due to its low gate charge (Qg) and internal gate resistance (Rg). However, ensure that the PCB layout and component selection are optimized for high-frequency operation to minimize losses and ringing.
    • To protect the MOSFET from ESD, follow proper handling and storage procedures, such as using an anti-static wrist strap or mat, and storing the devices in anti-static packaging. Additionally, consider adding ESD protection components, such as TVS diodes or ESD arrays, in the circuit design.
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