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    Part Img SUD15N15-95-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 15A TO252
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com

    SUD15N15-95-E3 datasheet preview

    SUD15N15-95-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SUD15N15-95-E3 is a standard TO-220 package with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
    • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -55°C to 150°C, and provide adequate heat sinking to maintain a safe operating temperature.
    • The maximum allowed voltage transient for the SUD15N15-95-E3 is 100V, and it is recommended to use a voltage clamp or transient voltage suppressor to protect the device from voltage spikes and surges.
    • Yes, the SUD15N15-95-E3 can be used in high-frequency switching applications up to 100kHz, but it is recommended to use a gate driver with a low output impedance and a high current capability to minimize switching losses.
    • The power dissipation of the SUD15N15-95-E3 can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
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