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STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal pad connection, copper pour, and via placement to ensure optimal thermal performance.
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The T1035H-6T requires a gate driver with a high current capability (typically > 1A) and a voltage rating that matches the MOSFET's gate-source voltage (Vgs). Consider factors like rise and fall times, propagation delay, and input impedance when selecting a gate driver.
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The maximum allowed voltage for Vds is 100V, and for Vgs it is ±20V. Exceeding these ratings can damage the MOSFET.
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To ensure SOA, follow the guidelines in the datasheet for maximum current, voltage, and power dissipation. Also, consider the MOSFET's thermal characteristics, such as junction temperature (Tj) and thermal resistance (Rthja).
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The T1035H-6T is suitable for high-frequency applications up to 1MHz. However, the optimal operating frequency range depends on the specific application, PCB layout, and gate driver selection.