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    TIC116A datasheet by Texas Instruments

    • 100 V, 8 A, PNP silicon reverse-blocking triode thyristor
    • Scan
    • No
    • Obsolete
    • EAR99
    • 8541.30.00.80
    • 8541.30.00.80
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    TIC116A datasheet preview

    TIC116A Frequently Asked Questions (FAQs)

    • Texas Instruments recommends a 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern around the device to ensure good heat dissipation. A minimum of 2 oz copper thickness is recommended for the top layer.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, thermal interface material selection, and PCB layout. Additionally, consider derating the device's power dissipation and voltage ratings according to the operating temperature.
    • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage within the specified operating range of 4.5V to 5.5V.
    • Texas Instruments recommends using a human-body model (HBM) ESD protection diode, such as the TI's TPD2EUSB30, to protect the TIC116A from electrostatic discharge. The diode should be connected between the input pins and the ground pin.
    • The recommended input capacitance for the TIC116A is 10nF to 100nF, depending on the specific application requirements. A larger input capacitance can help filter out noise and improve the device's overall performance.
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