The recommended power-up sequence is to apply VDD (1.2V) first, followed by VIO (1.8V or 3.3V) and then the clock signal. This ensures proper device operation and prevents latch-up.
To configure the EMIF for optimal performance, ensure that the memory timing parameters (e.g., CAS latency, RAS-to-CAS delay) are set according to the memory device's datasheet. Additionally, adjust the EMIF clock frequency and phase to match the memory device's requirements.
The maximum clock frequency supported by the TMS320C6727BGDH300 is 350 MHz. However, the actual clock frequency may be limited by the specific application, PCB design, and environmental conditions.
To implement a reliable boot process, use a boot loader that can recover from errors and ensure data integrity. Implement a checksum or CRC check on the boot loader and application code to detect any corruption. Additionally, use a secure boot mechanism, such as encryption and authentication, to prevent unauthorized access.
To ensure proper thermal management, ensure good airflow around the device, use a heat sink or thermal interface material, and avoid blocking the thermal pads on the package. Monitor the device's temperature using the on-chip temperature sensor and take corrective action if the temperature exceeds the recommended operating range.
TMS320C6727BGDH300 datasheet
by Texas Instruments
