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    Part Img TPS1100DR datasheet by Texas Instruments

    • SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFET
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • 8542.39.00.01
    • 8542.39.00.00
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    TPS1100DR datasheet preview

    TPS1100DR Frequently Asked Questions (FAQs)

    • A good PCB layout for the TPS1100DR involves placing the input and output capacitors close to the device, using a solid ground plane, and minimizing the length of the input and output traces. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
    • To ensure stability, it's essential to follow the recommended component values and PCB layout guidelines. Additionally, the output capacitor should be selected based on the specific application requirements, and the input capacitor should be chosen to ensure a stable input voltage.
    • The TPS1100DR can handle input voltages up to 18V, but it's recommended to operate within the specified input voltage range of 2.7V to 15V for optimal performance and reliability.
    • The TPS1100DR is rated for operation up to 125°C, but the device's performance and reliability may degrade at high temperatures. It's essential to consider the thermal design and heat dissipation in the system to ensure reliable operation.
    • The output voltage of the TPS1100DR can be calculated using the formula: VOUT = VREF x (1 + R1/R2), where VREF is the internal reference voltage, and R1 and R2 are the resistors in the feedback network.
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