TPS2013DR datasheet by Texas Instruments

TPS2013DR Frequently Asked Questions (FAQs)

• What is the maximum operating temperature range for the TPS2013DR?
  The TPS2013DR can operate from -40°C to 125°C, but the maximum junction temperature (TJ) should not exceed 150°C.
• How do I ensure the TPS2013DR is properly powered up and initialized?
  The TPS2013DR has an internal power-on reset (POR) circuit that ensures the device is properly powered up and initialized. However, it's recommended to add an external capacitor (typically 1-10uF) between the VIN pin and GND to filter out noise and ensure a clean power-up sequence.
• What is the recommended layout and placement for the TPS2013DR to minimize EMI and noise?
  To minimize EMI and noise, it's recommended to place the TPS2013DR close to the power source, use a solid ground plane, and keep the input and output traces short and separate. Additionally, adding a ferrite bead or a common-mode choke can help filter out high-frequency noise.
• Can I use the TPS2013DR in a high-reliability or automotive application?
  Yes, the TPS2013DR is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is also suitable for industrial and medical applications that require high reliability.
• How do I calculate the power dissipation and thermal resistance of the TPS2013DR?
  The power dissipation of the TPS2013DR can be calculated using the formula: Pd = (VIN - VOUT) x IOUT. The thermal resistance (RθJA) is typically around 45°C/W for the TPS2013DR. You can use the thermal resistance to estimate the junction temperature (TJ) using the formula: TJ = TA + (RθJA x Pd).