UCC3626N datasheet by Texas Instruments

UCC3626N Frequently Asked Questions (FAQs)

• What is the recommended layout and placement for the UCC3626N to minimize EMI?
  Texas Instruments recommends a compact layout with the UCC3626N placed close to the power MOSFETs, and the use of a solid ground plane to reduce EMI. Additionally, it is recommended to keep the high-frequency nodes (e.g. the drain of the power MOSFETs) away from the low-frequency nodes (e.g. the output voltage sense lines).
• How do I adjust the dead time between the high-side and low-side MOSFETs?
  The dead time between the high-side and low-side MOSFETs can be adjusted by adding a resistor (RDT) between the DT pin and the GND pin. The value of RDT determines the dead time, with a smaller value resulting in a shorter dead time.
• What is the maximum voltage that can be applied to the VCC pin?
  The maximum voltage that can be applied to the VCC pin is 15V, although it is recommended to keep it below 12V for reliable operation.
• How do I implement overcurrent protection using the UCC3626N?
  The UCC3626N has a built-in overcurrent protection feature that can be enabled by connecting a resistor (ROC) between the OC pin and the GND pin. The value of ROC determines the overcurrent threshold, with a smaller value resulting in a lower threshold.
• Can I use the UCC3626N in a synchronous rectifier configuration?
  Yes, the UCC3626N can be used in a synchronous rectifier configuration. In this configuration, the low-side MOSFET is used as a synchronous rectifier, and the UCC3626N provides the necessary gate drive signals.