DSASW0012239.pdf by Chino-Excel Technology

Partial File Text CES2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged
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