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    •  ? ' 5/— K NEC M Compound Transistor GAI L3N JScNPN^: EttisTJUMS'l) □ V & a (Ri = 4.7 kQ, R2 = 10 kQ) OGN1L3N t-J > 7° U / > ^ U Tifc'ffl Tè ä 1" 'ÄWft^S:» (Ta = 25 °C ) II s
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