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    • SEC Silicon Power Transistor it Vd = l 000 V TYP. (C = 2 300 pF, E-BTO^MTX) omm'i&W'iitmtlX^ho cre^3.0 pF(Vcb=30 V) fx^50 MHz(Vce=30 V, IE= —10 mA) (Ta = 25 °C ) WB0 I mm) DU fé fÃ
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