DSASW00214389.pdf by IXYS

Partial File Text DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS Test Conditions VDSS TJ = 25°C to 150°C 500 VDGR TJ = 25°C to 150°
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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200W MOSFET POWER AMP 900 v 9 amp mosfet DE150-501N04A PIN diode SPICE model rf power mosfet