DSA00102185.pdf by California Eastern Laboratories

Partial File Text NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES · HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B · LOW NOISE FIGURE: 1.1 dB at 1 GHz · HIGH COLLECTOR CURRENT: 100 mA · HIGH
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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2SC3357 2SC4226 2SC5006 2SC5011 32E16 epitaxial micro-x LB 122 transistor To-92 MICROWAVE TRANSISTOR NE856 NE85600 NE85618 NE85619 NE85630 NE85632 NE85635 NEC NE85635

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