DASF0047147.pdf by Toshiba

Partial File Text GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and col
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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GT60M303 GT60M303 application