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Partial File Text ï»¿- FLC307XP - GaAs FET & HEMT Chips FEATURES â¢ High Output Power: P1dB = 34.8dBm(Typ.) â¢ High Gain: G1dB = 9.5dB(Typ.) â¢ High PAE: r^ = 37%(Typ.) â¢ Proven Reliability DESCRIPTION The
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FLC30 FLC307XP fujitsu gaas fet fujitsu hemt