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DSA004673.pdf
by Intersil
Partial File Text
The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992
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ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabr
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8602 RECTIFIER
8602 RECTIFIER 4 PIN
AN8602
applications of mos controlled thyristor
ED-26 diode
ED26 diode
INTERSIL 1981
MOS Controlled Thyristor
mos Turn-off Thyristor
P channel 600v 20a IGBT
P channel 600v 30a IGBT
Pelly
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