The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DASF0041530.pdf
by Toshiba
Partial File Text
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High P
...
ower Switching Applications Fast Switching Applications Unit: mm · Fourth-generation IGBT ·
more
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
DASF0041530.pdf
preview
Download Datasheet
User Tagged Keywords
GT30J121
GT30J324