DSAE0013400.pdf by Infineon Technologies

Partial File Text IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 8.6 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal le
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSAE0013400.pdf preview

Download Datasheet

User Tagged Keywords

086N10 086n10n DD-50 PG-TO220-FP PG-TO220FP