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DSAZIHA2X00039268.pdf
by GeneSiC Semiconductor
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GA03JT12-247  Normally â OFF Silicon Carbide Junction Transistor VDS RDS(ON) ID @ Tc=150°C hFE Tc=25°C Features 1200 V 470 m⦠3A 54 Package ï· ï· ï· ï· ï·
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