DSAEDA000512.pdf by Toshiba

Partial File Text SSM3J120TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J120TU Unit: mm 1.5 V drive Low on-resistance 2.1Â±0.1 Ron = 140 m (max) (@VGS = -1.5 V) Ron = 78 m (max) (@V
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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