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TC58NYG0S3EBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
1 GBIT (128M Ã 8 BIT) CMOS NAND E PROM
DESCRIPTION
The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND
