DSA00387579.pdf by Fairchild Semiconductor

Partial File Text KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 ·
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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