DSASW0093864.pdf by Chino-Excel Technology

Partial File Text CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current h
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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