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Partial File Text FLC151XP GaAs FET and H E M T Chips FEATURES · · · · High Output Power: P-i ^ b = 31.5dBm (Typ.) High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability fujÏtsu :--
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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