DSAH00429766.pdf by Panasonic

Partial File Text Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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